IEC 62047-31-2019 半導體器件--微機電裝置--第31部分:多層MEMS材料界面黏附能四點(diǎn)彎曲試驗方法 Semiconductor devices – Micro-electromechanical devices – Part 31: Four-point bending test method for interfacial adhesion energy of layered MEMS materials

This part of IEC 62047 specifies a four-point bending test method for measuring interfacial 
adhesion energy of the weakest interface in the layered micro-electromechanical systems 
(MEMS) based on the concept of fracture mechanics. In a variety of MEMS devices, there are 
many layered material interfaces, and their adhesion energies are critical to the reliability of 
the MEMS devices. The four-point bending test utilizes a pure bending moment applied to a 
test piece of layered MEMS device, and the interfacial adhesion energy is measured from the 
critical bending moment for the steady state cracking in the weakest interface. This test 
method applies to MEMS devices with thin film layers deposited on semiconductor substrates. 
The total thickness of the thin film layers should be 100 times less than the thickness of a 
supporting substrate (typically a silicon wafer piece).dition 1.0 2019-04 INTERNATIONAL STANDARD colour inside Semiconductor devices – Micro-electromechanical devices – Part 31: Four-point bending test method for interfacial adhesion energy of layered MEMS materials IEC 62047-31:2019-04(en) THIS PUBLICATION IS COPYRIGHT PROTECTED Copyright ？ 2019 IEC, Geneva, Switzerland All rights reserved. Unless otherwise specified, no part of this publication may b