IEC 62047-16-2015 半導體器件--微型機電設備--第16部分:測定MEMS膜殘留應力的試驗方法--晶片彎曲法和懸臂梁偏位法 Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods

This part of IEC 62047 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 µm to 10 µm in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods. The films should be deposited onto a substrate of known mechanical properties of Young’s modulus and Poisson’s ratio. These methods are used to determine the residual stresses within thin films deposited on substrate  [1] .dition 1.0 2015-03 INTERNATIONAL STANDARD NORME INTERNATIONALE colour inside Semiconductor devices – Micro-electromechanical devices – Part 16: Test methods for determining residual stresses of MEMS films – Wafer curvature and cantilever beam deflection methods Dispositifs à semiconducteurs – Dispositifs microélectromécaniques – Partie 16: Méthodes d'essai pour déterminer les contraintes résiduelles des films de MEMS – Méthodes de la courbure de la plaquette et de déviation de